Decay of the deep-level extrinsic photoconductivity response of n-GaAs(Cr,Si) at liquid-helium temperature
- 28 September 1979
- journal article
- Published by IOP Publishing in Journal of Physics C: Solid State Physics
- Vol. 12 (18) , L725-L728
- https://doi.org/10.1088/0022-3719/12/18/005
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
- Deep centre photoluminescence spectra of GaAs(Cr, Si)Journal of Physics C: Solid State Physics, 1978
- Electrical compensation in semi-insulating gallium arsenideJournal of Physics C: Solid State Physics, 1978
- Large-Lattice-Relaxation Model for Persistent Photoconductivity in Compound SemiconductorsPhysical Review Letters, 1977
- EPR of() in gallium arsenide: Jahn-Teller distortion and photoinduced charge conversionPhysical Review B, 1977
- Deep traps in semi-insulating GaAs: Cr revealed by photo-sensitive ESRSolid State Communications, 1976
- Photoelectronic properties of high-resistivity GaAs : CrJournal of Applied Physics, 1976