Deep centre photoluminescence spectra of GaAs(Cr, Si)
- 28 September 1978
- journal article
- Published by IOP Publishing in Journal of Physics C: Solid State Physics
- Vol. 11 (18) , L771-L775
- https://doi.org/10.1088/0022-3719/11/18/007
Abstract
No abstract availableKeywords
This publication has 8 references indexed in Scilit:
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- Fine structure in the cathodoluminescence spectrum from chromium-doped gallium arsenideJournal of Physics C: Solid State Physics, 1978
- Experimental verification of Cr2+ models of photoluminescent transitions in GaAs:Cr and AlxGa1−xAs:Cr single crystalsSolid State Communications, 1978
- Effect of the 0.94, 1.0, 1.2, and 1.3 ev radiative centres on the intrinsic luminescence intensity in n-GaAsPhysica Status Solidi (a), 1977
- Photoluminescence from chromium in GaAsSolid State Communications, 1977
- EPR of() in gallium arsenide: Jahn-Teller distortion and photoinduced charge conversionPhysical Review B, 1977
- Deep traps in semi-insulating GaAs: Cr revealed by photo-sensitive ESRSolid State Communications, 1976
- Photoluminescence from deep centers in GaAsSolid State Communications, 1976