Photoresponse of the AsGa antisite defect in as-grown GaAs
- 15 April 1985
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 46 (8) , 781-783
- https://doi.org/10.1063/1.95908
Abstract
The photoresponse of the As+Ga antisite electron‐paramagnetic‐resonance (EPR) has been studied in as‐grown semi‐insulating GaAs as a function of illumination time and photon energy hν. The As+Ga EPR signal intensity changes are nonmonotonic in time in the range 1.1≲hν≲1.4 eV. The spectral dependences of As+Ga enhancement and quenching show distinct similarities with the EL2 optical cross sections σ0n (hν) and σ0p (hν), respectively. These results demonstrate that the EL2 defect and the AsGa antisite have practically identical optical and photoelectronic properties.Keywords
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