Identification of AsGa antisite defects in liquid encapsulated Czochralski GaAs
- 1 May 1984
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 44 (9) , 907-909
- https://doi.org/10.1063/1.94930
Abstract
We have identified the electron paramagnetic resonance (EPR) spectrum of the As on a Ga site (AsGa) defect in bulk undoped liquid encapsulated Czochralski grown GaAs. The intensity of the EPR signal can be correlated with the concentration of compensating carbon acceptors in the GaAs crystals. These results indicate that AsGa are responsible for the compensation of the undoped semi‐insulating material, and thus can be identified with the deep donor EL2 in such material.Keywords
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