Implications of radiation-induced dopant deactivation for npn bipolar junction transistors
- 1 December 2000
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Nuclear Science
- Vol. 47 (6) , 2281-2288
- https://doi.org/10.1109/23.903766
Abstract
No abstract availableThis publication has 112 references indexed in Scilit:
- Enhanced low-dose-rate sensitivity of a low-dropout voltage regulatorIEEE Transactions on Nuclear Science, 1998
- Space charge limited degradation of bipolar oxides at low electric fieldsIEEE Transactions on Nuclear Science, 1998
- Modeling ionizing radiation induced gain degradation of the lateral PNP bipolar junction transistorIEEE Transactions on Nuclear Science, 1996
- Dose-rate effects on radiation-induced bipolar junction transistor gain degradationApplied Physics Letters, 1994
- Charge separation for bipolar transistorsIEEE Transactions on Nuclear Science, 1993
- An overview of radiation-induced interface traps in MOS structuresSemiconductor Science and Technology, 1989
- Mechanism for hydrogen compensation of shallow-acceptor impurities in single-crystal siliconPhysical Review B, 1985
- Hole traps and trivalent silicon centers in metal/oxide/silicon devicesJournal of Applied Physics, 1984
- Neutralization of Shallow Acceptor Levels in Silicon by Atomic HydrogenPhysical Review Letters, 1983
- Two-carrier nature of interface-state generation in hole trapping and radiation damageApplied Physics Letters, 1981