Dose-rate effects on radiation-induced bipolar junction transistor gain degradation
- 10 October 1994
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 65 (15) , 1918-1920
- https://doi.org/10.1063/1.112816
Abstract
Analysis of radiation damage in modern NPNbipolar transistors at various dose rates is performed with a recently introduced charge separation method and pisces simulations. The charge separation method is verified with measurements on metal‐oxide‐semiconductor capacitors. Gain degradation is more pronounced at lower dose rates. The charge separation technique reveals that depletion‐region spreading and effective recombination velocity are both greater for devices irradiated at lower dose rates.Keywords
This publication has 17 references indexed in Scilit:
- Trends in the total-dose response of modern bipolar transistorsIEEE Transactions on Nuclear Science, 1992
- Qualifying commercial ICs for space total-dose environmentsIEEE Transactions on Nuclear Science, 1992
- Hardness assurance for low-dose space applications (MOS devices)IEEE Transactions on Nuclear Science, 1991
- Response of advanced bipolar processes to ionizing radiationIEEE Transactions on Nuclear Science, 1991
- A comparison of methods for simulating low dose-rate gamma ray testing of MOS devicesIEEE Transactions on Nuclear Science, 1991
- An improved standard total dose test for CMOS space electronicsIEEE Transactions on Nuclear Science, 1989
- Total-Dose Radiation and Annealing Studies: Implications for Hardness Assurance TestingIEEE Transactions on Nuclear Science, 1986
- A Simple Model for Separating Interface and Oxide Charge Effects in MOS Device CharacteristicsIEEE Transactions on Nuclear Science, 1984
- Hardness Assurance Considerations for Long-Term Ionizing Radiation Effects on Bipolar StructuresIEEE Transactions on Nuclear Science, 1978
- CMOS Hardness Prediction for Low-Dose-Rate EnvironmentsIEEE Transactions on Nuclear Science, 1977