A comparison of methods for simulating low dose-rate gamma ray testing of MOS devices

This publication has 12 references indexed in Scilit:

• A comparison of methods for total dose testing of bulk CMOS and CMOS/SOS devices
  IEEE Transactions on Nuclear Science, 1990
• Strategies for lot acceptance testing using CMOS transistors and ICs
  IEEE Transactions on Nuclear Science, 1989
• Dose dependence of interface traps in gate oxides at high levels of total dose
  IEEE Transactions on Nuclear Science, 1989
• Application of a model for treatment of time dependent effects on irradiation of microelectronic devices
  IEEE Transactions on Nuclear Science, 1989
• Using laboratory X-ray and cobalt-60 irradiations to predict CMOS device response in strategic and space environments
  IEEE Transactions on Nuclear Science, 1988
• A Framework for an Integrated Set of Standards for Ionizing Radiation Testing of Microelectronics
  IEEE Transactions on Nuclear Science, 1987
• Total Dose Effects at Low Dose Rates
  IEEE Transactions on Nuclear Science, 1986
• Saturation of Threshold Voltage Shift in MOSFET's at High Total Dose
  IEEE Transactions on Nuclear Science, 1986
• A Comparison of Conventional 60Co Testing and Low Dose-Accumulation-Rate Exposure of Metal-Gate CMOS IC's
  IEEE Transactions on Nuclear Science, 1984
• Predicting CMOS Inverter Response in Nuclear and Space Environments
  IEEE Transactions on Nuclear Science, 1983