A Framework for an Integrated Set of Standards for Ionizing Radiation Testing of Microelectronics
- 1 January 1987
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Nuclear Science
- Vol. 34 (6) , 1719-1725
- https://doi.org/10.1109/tns.1987.4337543
Abstract
Post irradiation effects necessitate modifications to total dose testing procedures. A test methodology based on three options is proposed: (a) Test Method 1019, (b) Method 1019 with safety factors, (c) and a new test method based on extrapolation from measurements to effects expected at time of threat.Keywords
This publication has 14 references indexed in Scilit:
- Total-Dose Failure Mechanisms of Integrated Circuits in Laboratory and Space EnvironmentsIEEE Transactions on Nuclear Science, 1987
- Total Dose Hardness Assurance for Microcircuits for Space EnvironmentIEEE Transactions on Nuclear Science, 1986
- A Proposed Scheme for Measuring and Categorizing the Total Ionizing Radiation Dose Response of MOS DevicesIEEE Transactions on Nuclear Science, 1986
- Spatial Dependence of Trapped Holes Determined from Tunneling Analysis and Measured AnnealingIEEE Transactions on Nuclear Science, 1986
- Correlation of Radiation Effects in Transistors and Integrated CircuitsIEEE Transactions on Nuclear Science, 1985
- The Time Dependence of Interface State ProductionIEEE Transactions on Nuclear Science, 1985
- Modeling of MOS Radiation and Post Irradiation EffectsIEEE Transactions on Nuclear Science, 1984
- Super Recovery of Total Dose Damage in MOS DevicesIEEE Transactions on Nuclear Science, 1984
- Thermal Annealing of Radiation Induced Defects: A Diffusion-Limited Process?IEEE Transactions on Nuclear Science, 1983
- A Framework for Understanding Radiation-Induced Interface States in SiO2 MOS StructuresIEEE Transactions on Nuclear Science, 1980