A Proposed Scheme for Measuring and Categorizing the Total Ionizing Radiation Dose Response of MOS Devices
Open Access
- 1 January 1986
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Nuclear Science
- Vol. 33 (6) , 1337-1342
- https://doi.org/10.1109/TNS.1986.4334602
Abstract
A scheme is proposed for categorizing the longterm total ionizing radiation dose responses of MOS (metal-oxide-semiconductor) devices based on the relative magnitudes of hole trapping and interface-state buildup in the gate oxide layer. Also presented is a procedure for determining the response categories of test devices through standard radiation response measurements.Keywords
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