Measurement of Radiation-Induced Interface Traps Using MOSFETs
- 1 January 1984
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Nuclear Science
- Vol. 31 (6) , 1256-1260
- https://doi.org/10.1109/tns.1984.4333492
Abstract
The buildup of SiO2-Si interface traps due to radiation was measured by a charge pumping measurement method and by a technique based on the slope of the transistor ln(Id)-Vg characteristics in weak inversion. Both aueasurements make use of MOS transistors. The important differences in the "trap density" obtained from the two measurement methods are discussed. The results of the measurements are interpreted to assess the effect of gamma irradiation on the distribution of interface trap density.Keywords
This publication has 15 references indexed in Scilit:
- A reliable approach to charge-pumping measurements in MOS transistorsIEEE Transactions on Electron Devices, 1984
- Generation-annealing kinetics of the interface donor states at 0.25 eV above the midgap and the turn-around phenomena on oxidized silicon during avalanche electron injectionJournal of Applied Physics, 1983
- Radiation Effects Introduced by X-Ray Lithography in MOS DevicesIEEE Transactions on Nuclear Science, 1982
- Generation of Oxide Charge and Interface States by Ionizing Radiation and by Tunnel Injection ExperimentsIEEE Transactions on Nuclear Science, 1982
- Generation of interface states by hot hole injection in MOSFET'sIEEE Transactions on Electron Devices, 1982
- Electrical measurement of feature sizes in MOS Si2-gate VLSI technologyIEEE Transactions on Electron Devices, 1980
- A quasi-static technique for MOS C-V and surface state measurementsSolid-State Electronics, 1970
- The Si-SiO2Interface - Electrical Properties as Determined by the Metal-Insulator-Silicon Conductance TechniqueBell System Technical Journal, 1967
- DENSITY OF SiO2–Si INTERFACE STATESApplied Physics Letters, 1966
- An investigation of surface states at a silicon/silicon oxide interface employing metal-oxide-silicon diodesSolid-State Electronics, 1962