A Simple Model for Separating Interface and Oxide Charge Effects in MOS Device Characteristics
- 1 January 1984
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Nuclear Science
- Vol. 31 (6) , 1497-1501
- https://doi.org/10.1109/tns.1984.4333537
Abstract
A simple model to describe radiation effects on MOSFET electrical characteristics is presented. The key assumption is that mobility degradation in an enhancement mode MOSFET is predominantly due to charged interface traps. Model predictions are compared with measured values of interface trap density and device I - V curves.Keywords
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