Electron scattering in silicon inversion layers by oxide and surface roughness
- 1 August 1976
- journal article
- Published by Elsevier in Surface Science
- Vol. 58 (1) , 178-181
- https://doi.org/10.1016/0039-6028(76)90131-x
Abstract
No abstract availableThis publication has 6 references indexed in Scilit:
- Oxide-Charge-Induced Impurity Level in Silicon Inversion LayersPhysical Review Letters, 1975
- High temperature 'variable range hopping' conductivity in silicon inversion layersJournal of Physics C: Solid State Physics, 1975
- Theory of the carrier-density fluctuations in an IGFET near thresholdJournal of Applied Physics, 1975
- Substrate Bias Effects on Electron Mobility in Silicon Inversion Layers at Low TemperaturesPhysical Review Letters, 1975
- On the role of scattering by surface roughness in silicon inversion layersSurface Science, 1973
- Quantum Spectroscopy of the Low-Field Oscillations in the Surface ImpedancePhysical Review B, 1968