Substrate Bias Effects on Electron Mobility in Silicon Inversion Layers at Low Temperatures
- 6 January 1975
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 34 (1) , 15-17
- https://doi.org/10.1103/physrevlett.34.15
Abstract
The mobility of electrons in silicon inversion layers and conductance activation energy have been measured as a function of substrate bias. The mobility increased and the activation energy decreased as the electrons were forced toward the surface. This seems inconsistent with activated conduction arising from potential fluctuations due to oxide charge.Keywords
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