Effect of charge inhomogeneities on silicon surface mobility
- 1 May 1973
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 44 (5) , 2425-2427
- https://doi.org/10.1063/1.1662584
Abstract
A calculation is presented to estimate the effect on siliconsurfacemobility of the potential fluctuation due to a random distribution of localized charges near the interface. With a choice of reasonable values for two parameters, the mean—square charge deviation and the correlation length, the theoretical mobility agrees rather well with experiments at low gate voltage and very low temperatures.This publication has 7 references indexed in Scilit:
- On the role of scattering by surface roughness in silicon inversion layersSurface Science, 1973
- Surface Potential Fluctuations Generated by Interface Charge Inhomogeneities in MOS DevicesJournal of Applied Physics, 1972
- Semiconductor Surface ElectrostaticsJournal of Vacuum Science and Technology, 1971
- Apparent interface state density introduced by the spatial fluctuations of surface potential in an m.o.s. structureElectronics Letters, 1970
- Ionised impurity scattering in silicon surface channelsSolid-State Electronics, 1970
- Properties of Semiconductor Surface Inversion Layers in the Electric Quantum LimitPhysical Review B, 1967
- The Si-SiO2Interface - Electrical Properties as Determined by the Metal-Insulator-Silicon Conductance TechniqueBell System Technical Journal, 1967