Thermal Annealing of Radiation Induced Defects: A Diffusion-Limited Process?
Open Access
- 1 January 1983
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Nuclear Science
- Vol. 30 (6) , 4059-4063
- https://doi.org/10.1109/tns.1983.4333081
Abstract
Annealing of defects in bulk fused silicas suggests the rate-limiting step is diffusion of molecular species. Evidence that similar processes occur in MOS devices is presented. A systematic dependence on gate size is shown.Keywords
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