1 /spl mu/m MOSFET VLSI technology. VIII. Radiation effects
- 1 April 1979
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Journal of Solid-State Circuits
- Vol. 14 (2) , 294-301
- https://doi.org/10.1109/jssc.1979.1051177
Abstract
For pt.VII see ibid., vol.SC14, no.2, p.291 (1979). The effect of electron-beam radiation on polysilicon-gate MOSFETs is examined. The irradiations were performed at 25 kV in a vector scan electron-beam lithography system at dosages typical of those used to expose electron-beam resists. Two types of studies are reported. In the first type, devices fabricated with optical lithography were exposed to blanket electron-beam radiation after fabrication. In the second, discrete devices from a test chip, fabricated entirely with electron-beam lithography, were used.Keywords
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