Low-temperature diffusion of Al into polycrystalline Si
- 1 December 1977
- journal article
- letter
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 48 (12) , 5349-5351
- https://doi.org/10.1063/1.323572
Abstract
Diffusion of Al into a polycrystalline Si layer chemically deposited at 640 °C was studied by capacitance‐voltage characteristics, sheet resistance, and electron microprobe measurements in the 180–550 °C temperature range. It has been found that diffusion of Al into polycrystalline Si takes place at temperatures as low as 300 °C, and that the polycrystalline Si becomes electrically conductive. The sheet resistance of polycrystalline Si decreases with increasing annealing temperature. Annealing at a higher temperature, however, induces migration and recrystallization of Si in Al, and the original polycrystalline‐Si layer loses its integrity.This publication has 6 references indexed in Scilit:
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