Characterization of platinum germanide/Ge(100) Schottky barrier height for Ge channel Metal Source/Drain MOSFET
- 1 June 2006
- journal article
- Published by Elsevier in Thin Solid Films
- Vol. 508 (1-2) , 359-362
- https://doi.org/10.1016/j.tsf.2005.06.119
Abstract
No abstract availableThis publication has 8 references indexed in Scilit:
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