The Effect of the Emitter-base Lateral Diode on Double-diffused Planar Transistor Current Gain†

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Abstract
The paper is concerned with the evaluation of the contribution of the emitter-base lateral diode to the total emitter current of double-diffused planar transistors. The theoretical calculations are made on a simplified model of device structure. The results are discussed in terms of structure parameters of the transistor widely used in the engineering design of planar transistors. It is pointed out that the emitter-base lateral diode does not affect the current gain of the transistor at low emitter currents; it may, however, degrade /J0 in the range of moderate and high emitter currents by a combined action with the effect of the now of d.c. base current parallel to the emitter junction (the d.c. biasing effect).