Sub-100 μA current operation of strained InGaAs quantum well lasers at low temperatures
- 3 October 1994
- journal article
- conference paper
- Published by AIP Publishing in Applied Physics Letters
- Vol. 65 (14) , 1805-1807
- https://doi.org/10.1063/1.112849
Abstract
Very low threshold currents (<100 μA) have been achieved in InGaAs strained single quantum well lasers at cryogenic temperatures. Threshold currents of 38 and 56 μA and external quantum efficiency ∼1 mW/mA have been demonstrated under cw operation condition at temperatures of 6 and 77 K, respectively. The external quantum efficiency increased by about a factor of 2 at low temperatures (<100 K) in comparison to that at room temperature. These results are relevant to the prospect of integration of semiconductor lasers with low temperature electronics for high performanceKeywords
This publication has 4 references indexed in Scilit:
- Efficient high-speed direct modulation in p -doped In 0.35 Ga 0.65 As/GaAs multiquantum well lasersElectronics Letters, 1992
- High speed operation of very low threshold strained InGaAs/GaAs double quantum well lasersApplied Physics Letters, 1992
- Microampere threshold current operation of GaAs and strained InGaAs quantum well lasers at low temperatures (5 K)Applied Physics Letters, 1991
- Diffraction studies of the high pressure phases of GaAs and GaPJournal of Applied Physics, 1982