The Hole Conductivity Prefactor and the Mobility Gap of a—Si:H and a—Ge:H
- 1 December 1991
- journal article
- research article
- Published by Wiley in Physica Status Solidi (b)
- Vol. 168 (2) , K65-K68
- https://doi.org/10.1002/pssb.2221680231
Abstract
No abstract availableThis publication has 5 references indexed in Scilit:
- Experimental tests of the autocompensation model of dopingPhilosophical Magazine Part B, 1991
- Electron and hole μτ products of slightly doped a-Ge:H filmsJournal of Non-Crystalline Solids, 1991
- Internal photoemission of holes and the mobility gap of hydrogenated amorphous siliconPhysical Review Letters, 1989
- Electronic Transport in Hydrogenated Amorphous SemiconductorsPublished by Springer Nature ,1989
- Problems in the understanding of electronic properties of amorphous siliconJournal of Non-Crystalline Solids, 1987