Preparation and Some Properties of Highly Resistive a-Si:H:F Film

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Abstract
Highly resistive a-Si:H:F film more than 1014 Ωcm at room temperature is prepared by a glow discharge in a gas mixture of SiF4, SiH4 and H2 under the condition of suppressing the formation of SiF3 bonds. The film shows an excellent conductivity change of 4 orders of magnitude at illumination with light 650 nm in wavelength and 50 µW/cm2 in intensity. It is also described that the formation of SiF3 bonds, which becomes remarkable at lower total gas-flow rate as well as higher partial flow rate of SiF4, leads to the degradation of electric properties such as decrease of dark resistivity, photoconductivity and drift mobility.