Excitonic photoluminescence linewidths in AlGaAs grown by molecular beam epitaxy

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Abstract
The linewidths of excitonic transitions were measured in AlxGa1−xAs, grown by molecular beam epitaxy as a function of alloy composition x for values of x≲0.43 using high resolution photoluminescence spectroscopy at liquid helium temperature. The values of the linewidths thus measured are compared with the results of several theoretical calculations in which the dominant broadening mechanism is assumed to be the statistical potential fluctuations caused by the components of the alloy. An increase in the linewidth as a function of x is observed which is in essential agreement with the prediction of the various theoretical calculations. The linewidths of the excitonic transitions in AlxGa1−xAs observed in the present work are the narrowest ever reported in the literature, for example σ=2.1 meV for x=0.36, thus indicating very high quality material.