Growth by molecular beam epitaxy and characterization of high purity GaAs and AlGaAs
- 1 December 1983
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 54 (12) , 6982-6988
- https://doi.org/10.1063/1.332015
Abstract
We report on the growth by molecular beam epitaxy of high-quality GaAs and AlxGa1−xAs (x≲0.43), and discuss the effect of system parameters on material quality. The highest Hall mobility in GaAs at 77 °K was 144 000 cm2/V sec, and the photoluminescence spectra of undoped layers exhibited a strong free exciton line and a much reduced carbon peak with no carbon-related defects. A slow growth process at a substrate temperature of 600 °C produced excellent AlxGa1−xAs whose luminescence spectrum showed a distinct excition peak 4 meV wide. This AlxGa1−xAs is compared to layers grown at a faster rate at substrate temperatures of 700 °C.This publication has 33 references indexed in Scilit:
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