Luminescence and Excitation Spectra of Exciton Emission in GaAs
- 1 December 1974
- journal article
- research article
- Published by Wiley in Physica Status Solidi (b)
- Vol. 66 (2) , 461-470
- https://doi.org/10.1002/pssb.2220660208
Abstract
No abstract availableKeywords
This publication has 20 references indexed in Scilit:
- Free hole - neutral donor recombination in high purity GaAsSolid State Communications, 1974
- Polariton Reflectance and Photoluminescence in High-Purity GaAsPhysical Review B, 1973
- The photoluminescence spectrum of bound excitons in indium phosphide and gallium arsenideJournal of Physics C: Solid State Physics, 1972
- Nonhydrogenic Exciton and Energy Gap of GaAsPhysical Review Letters, 1972
- Observation of Polaritons in GaAs: A New Interpretation of the Free-Exciton Reflectance and LuminescencePhysical Review Letters, 1971
- Identification of exciton-neutral donor complexes in the photoluminescence of high purity GaAsSolid State Communications, 1970
- Effect of Electron-Exciton Collisions on the Free-Exciton Linewidth in Epitaxial GaAsPhysical Review Letters, 1969
- Photoluminescence and Photoconductivity in Undoped Epitaxial GaAsPhysical Review B, 1969
- Bound-Exciton, Free-Exciton, Band-Acceptor, Donor-Acceptor, and Auger Recombination in GaAsPhysical Review B, 1968
- Free-Carrier and Exciton Recombination Radiation in GaAsPhysical Review B, 1968