Free hole - neutral donor recombination in high purity GaAs
- 1 February 1974
- journal article
- Published by Elsevier in Solid State Communications
- Vol. 14 (4) , 331-334
- https://doi.org/10.1016/0038-1098(74)90912-0
Abstract
No abstract availableKeywords
This publication has 15 references indexed in Scilit:
- Near band-edge optical absorption in pure GaAsSolid State Communications, 1972
- Resolved Free-Exciton Transitions in the Optical-Absorption Spectrum of GaAsPhysical Review B, 1972
- A Photon Counting Apparatus for Kinetic and Spectral MeasurementsReview of Scientific Instruments, 1972
- Observation of Polaritons in GaAs: A New Interpretation of the Free-Exciton Reflectance and LuminescencePhysical Review Letters, 1971
- Identification of exciton-neutral donor complexes in the photoluminescence of high purity GaAsSolid State Communications, 1970
- Photoluminescence and Photoconductivity in Undoped Epitaxial GaAsPhysical Review B, 1969
- Bound-Exciton, Free-Exciton, Band-Acceptor, Donor-Acceptor, and Auger Recombination in GaAsPhysical Review B, 1968
- Free-Carrier and Exciton Recombination Radiation in GaAsPhysical Review B, 1968
- Optical Transitions Involving Impurities in SemiconductorsPhysical Review B, 1963
- Optical absorption and recombination radiation in semiconductors due to transitions between hydrogen-like acceptor impurity levels and the conduction bandJournal of Physics and Chemistry of Solids, 1960