High Purity GaAs Crystals Grown by Liquid Phase Epitaxy
- 1 April 1971
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 10 (4)
- https://doi.org/10.1143/jjap.10.509
Abstract
No abstract availableThis publication has 1 reference indexed in Scilit:
- EFFECT OF ARSENIC PRESSURE ON HEAT TREATMENT OF LIQUID EPITAXIAL GaAsApplied Physics Letters, 1970