EFFECT OF ARSENIC PRESSURE ON HEAT TREATMENT OF LIQUID EPITAXIAL GaAs
- 1 April 1970
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 16 (7) , 262-265
- https://doi.org/10.1063/1.1653188
Abstract
Short‐time heat treatments in a H2 flow, and under an As vapor, have been performed on n‐type and p‐type GaAs crystals. Acceptors are created at the surface and proceed to the interior. The changes in carrier concentration as function of As vapor pressure showed the acceptors to be associated with As vacancies.Keywords
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