Annealing of N-Type GaAs under Excess Arsenic Vapor
- 1 May 1969
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 8 (5)
- https://doi.org/10.1143/jjap.8.632
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
- Effect of Heat Treatment on Photoluminescence of Zn-Doped GaAsJournal of Applied Physics, 1967
- Behavior of lattice defects in GaAsJournal of Physics and Chemistry of Solids, 1964
- Electrical activity of copper in GaAsJournal of Physics and Chemistry of Solids, 1964
- Heat Treatment of Gallium ArsenideJournal of Applied Physics, 1960