Electrical activity of copper in GaAs
- 1 February 1964
- journal article
- Published by Elsevier in Journal of Physics and Chemistry of Solids
- Vol. 25 (2) , 221-223
- https://doi.org/10.1016/0022-3697(64)90082-4
Abstract
No abstract availableKeywords
This publication has 7 references indexed in Scilit:
- Behavior of lattice defects in GaAsJournal of Physics and Chemistry of Solids, 1964
- Evidence for the Existence of High Concentrations of Lattice Defects in GaAsPhysical Review Letters, 1962
- Behavior of Manganese in GaAsJournal of Applied Physics, 1962
- Properties of High-Resistivity Gallium Arsenide Compensated with Diffused CopperJournal of Applied Physics, 1961
- Precipitation of Copper in Gallium ArsenideJournal of Applied Physics, 1960
- Properties ofp-Type GaAs Prepared by Copper DiffusionJournal of Applied Physics, 1960
- Diffusion, solubility, and electrical behavior of copper in gallium arsenideJournal of Physics and Chemistry of Solids, 1958