Temperature dependence of photoluminescence from germanium-doped and undoped gallium arsenide
- 1 November 1973
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 44 (11) , 5001-5004
- https://doi.org/10.1063/1.1662077
Abstract
Changes in photoluminescence intensities, energies, and band shapes as a function of temperature in the range 4.2–300 K lead to the identification of germanium as a 40 ± 2 meV deep acceptor in GaAs. Luminescence due to this acceptor quenches near 200 K in favor of a high‐energy band that grows out of the low‐temperature bound and free‐exciton structure. The origin of the 300 K luminescence is considered and it is attributed to band‐to‐band recombination.This publication has 22 references indexed in Scilit:
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