Improving the mobility of an In0.52Al0.48As/In0.53Ga0.47As inverted modulation-doped structure by inserting a strained InAs quantum well

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Abstract
The mobility of two‐dimensional electrons in an In0.52Al0.48As/In0.53Ga0.47As inverted modulation‐doped structure improved by inserting an InAs quantum well into the InGaAs channel. This letter addresses the main cause of this mobility improvement. By optimizing the thickness of the InAs quantum well, its distance from the underlying InAlAs spacer layer, and the InAlAs spacer‐layer thickness, maximum mobilities of 16 500 cm2/V s at 300 K and 155 000 cm2/V s at 10 K are attained. The improvement in mobility is attributed to a decrease in scattering caused by ionized impurities, interface‐roughness, and trap impurities. This decrease is a result of the superior confinement of two‐dimensional electron gas in the InAs quantum well.