Properties of the two-dimensional electron gas in modulation-doped GaInAs(P)/InP structures grown by low-pressure metalorganic vapor-phase epitaxy

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Abstract
This paper is concerned with the characteristics of the two‐dimensional electron gas (2DEG) at modulation‐doped GaInAs/InP and GaInAsP/InP heterojunctions and GaInAs/InP single‐quantum‐well structures grown by low‐pressure metalorganic vapor‐phase epitaxy (LP‐MOVPE) at 20 hPa. Using trimethyl‐In, trimethyl‐Ga, AsH3, and PH3 as source materials, this process permits the deposition of very uniform films with abrupt interfaces and doping profiles. We give the first detailed analysis of modulation‐doped structures by classical Hall effect, Shubnikov–de Haas, and quantum Hall‐effect measurements. Study of the scattering mechanisms of the 2DEG in modulation‐doped GaInAs/InP and GaInAsP/InP structures reveals a small interface roughness and a low impurity content at the interfaces. Electron mobilities at 4.2 K up to 189 000 cm2/V s for a GaInAs/InP and 72 000 cm2/V s for a GaInAsP/InP heterojunction as well as values as high as 170 000 cm2/V s for a GaInAs/InP quantum well structure demonstrate the excellent control of the growth process and the quality of the material attainable by LP‐MOVPE.