LP-MOCVD growth and characterization of undoped and modulation doped GaInAsP/InP and GaInAs/InP multi quantum wells
- 31 December 1988
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 93 (1-4) , 382-388
- https://doi.org/10.1016/0022-0248(88)90557-x
Abstract
No abstract availableKeywords
This publication has 14 references indexed in Scilit:
- Optical properties of very narrow GaInAs/InP quantum wells grown by low-pressure metalorganic vapor phase epitaxyApplied Physics Letters, 1988
- Cathodoluminescence atomic scale images of monolayer islands at GaAs/GaAlAs interfacesJournal of Vacuum Science & Technology B, 1987
- Chemical beam epitaxial growth of very low threshold Ga0.47In0.53As/InP double-heterostructure and multiquantum well lasersApplied Physics Letters, 1986
- Two-dimensional electron gas in a Ga0.47In0.53As/InP heterojunction grown by chemical beam epitaxyApplied Physics Letters, 1986
- Mass spectrometric investigation of gas switching in an InGaAsP MOVPE systemJournal of Crystal Growth, 1986
- Optical properties of very thin GaInAs(P)/InP quantum wells grown by gas source molecular beam epitaxyApplied Physics Letters, 1986
- InGaAsP distributed feedback multiquantum well laserApplied Physics Letters, 1986
- Energy levels and alloy scattering in InP-In (Ga)As heterojunctionsApplied Physics Letters, 1983
- Low pressure metalorganic chemical vapor deposition of InP and related compoundsJournal of Electronic Materials, 1983
- Long-wavelength (1.3- to 1.6-µm) detectors for fiber-optical communicationsIEEE Transactions on Electron Devices, 1982