Energy levels and alloy scattering in InP-In (Ga)As heterojunctions
- 15 September 1983
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 43 (6) , 591-593
- https://doi.org/10.1063/1.94435
Abstract
We present the results of self-consistent variational calculations for the energy levels and wave functions of modulation-doped InP-In(Ga)As heterojunctions. With the variational wave functions we calculate the electron scattering by alloy disorder. Retaining the bulk In(Ga)As value (∼0.6 eV) for the alloy disorder potential the mobility limited by alloy disorder is only ∼2×105 cm2/Vs for ne ∼3×1011 cm−2.Keywords
This publication has 6 references indexed in Scilit:
- Self-Consistent Results for a GaAs/AlxGa1-xAs Heterojunciton. II. Low Temperature MobilityJournal of the Physics Society Japan, 1982
- Self-Consistent Results for a GaAs/AlxGa1-xAs Heterojunction. I. Subband Structure and Light-Scattering SpectraJournal of the Physics Society Japan, 1982
- Two-dimensional electron gas in a In0.53Ga0.47As-InP heterojunction grown by metalorganic chemical vapor depositionApplied Physics Letters, 1982
- Electron mobilities in modulation doped Ga0.47In0.53As/Al0.48In0.52 As heterojunctions grown by molecular beam epitaxyApplied Physics Letters, 1982
- 1.5 μm room-temperature pulsed operation of GaInAsP/InP double heterostructure grown by LP MOCVDElectronics Letters, 1981
- Negative Field-Effect Mobility on (100) Si SurfacesPhysical Review Letters, 1966