Two-dimensional electron gas in a Ga0.47In0.53As/InP heterojunction grown by chemical beam epitaxy
- 13 October 1986
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 49 (15) , 960-962
- https://doi.org/10.1063/1.97495
Abstract
Shubnikov–de Haas, quantum Hall effect, and cyclotron resonance measurements revealed the existence of a high mobility, two‐dimensional electron gas at the Ga0.47In0.53As/InP heterointerface grown by chemical beam epitaxy. Enhanced electron mobilities were as high as ∼130×103 cm2/V s at 4.2 K. A striking feature in the data which also indicates that the sample is of high quality is the large number of Shubnikov–de Haas oscillation periods observed. Oscillations were observable up to a Landau filling factor of around 50, corresponding to a Landau level index of 25.Keywords
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