Two-dimensional electron gas at a molecular beam epitaxial-grown, selectively doped, In0.53Ga0.47As-In0.48Al0.52As interface
- 1 August 1982
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 41 (3) , 274-277
- https://doi.org/10.1063/1.93499
Abstract
We report the observation of a high‐mobility, two‐dimensional electron gas (2DEG) at the interface between a molecular beam epitaxial (MBE)‐grown undoped In0.53Ga0.47As layer and a subsequent layer of MBE‐grown, Si‐doped In0.48Al0.52As . Peak mobilities of ∼92 000 cm2 V−1 s−1 have been observed at 4.2 K. From Hall and Shubnikov‐de Haas studies we have found that the 2DEG can be characterized by nch = 6–8×1011 cm−2. In all cases we found two subbands to be occupied at Nch≳4.5×1011 cm−2.Keywords
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