Chemical beam epitaxial growth of extremely high quality InGaAs on InP

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Abstract
Full widths at half‐maximum intensity of the (004) Bragg reflecton peak as small as 24 arcs are obtained from InGaAs epilayers 4–6 μm thick. Such linewidth is the narrowest reported thus far for an InGaAs epilayer grown by any vapor phase technique reported in literature. Such extreme compositon uniformity is also supported by results from Auger depth profiles and 2 K photoluminescence measurements. Very intense efficient luminescence peaks due to excitonic transitions with linewidths (FWHM) as narrow as 1.2 meV are obtained. This again represents the narrowest linewidth ever reported for InGaAs grown by any technique. In fact, such a linewidth represents the narrowest linewidth ever measured for any alloy semiconductor. Further, the photoluminescence spectra reveal the donor‐to‐acceptor pair recombination is nearly absent. This indicates that the InGaAs is of very high purity. Hall measurements of 2–5‐μm‐thick epilayers grown directly on InP substrates have mobilities of 10 000–12 000 and 40 000–57 000 cm2/V s at 300 and 77 K with n=5×1014–5×1015 cm−3. These values are among the highest of all the results for InGaAs grown by other techniques.