High Mobility GaInAs Thin Layers Grown by Molecular Beam Epitaxy
- 1 February 1985
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 24 (2A) , L119
- https://doi.org/10.1143/jjap.24.l119
Abstract
Thin (0.5 µm) GaInAs layers are grown by molecular beam epitaxy on InP substrates with and without AlInAs buffer layers. The best electron mobilities of the layer grown without the buffer are 9700 cm2V-1s-1 at room teperature and 55500 cm2V-1s-1 at 77K in the dark. The highest mobility of the layer is 61000 cm2V-1s-1 at 60 K. Electron mobilities of the layer with the buffer are as high as 11900 cm2V-1s-1 at room temperature and 53800 cm2V-1s-1 at 77 K in the dark, while 64400 cm2V-1s-1 is measured at 77 K under an illumination condition.Keywords
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