Chemical beam epitaxial growth of very low threshold Ga0.47In0.53As/InP double-heterostructure and multiquantum well lasers

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Abstract
We report the successful preparation by chemical beam epitaxy and performance characteristics of Ga0.47In0.53As/InP double‐heterostructure (DH) and multiquantum well (MQW) lasers emitting at 1.47–1.72 μm. The very low threshold current densities Jth of 1.3 kA/cm2 and 1.5 kA/cm2 obtained from DH and MQW laser wafers, respectively, suggest that the present materials and heterointerfaces are superior to those obtained previously by other techniques. In fact, these Jth’s are the lowest obtained thus far for such lasers. Differential quantum efficiency of ∼18% per facet was obtained for both DH and MQW lasers. Furthermore, we were able to show that there was a definite improvement in the threshold‐temperature dependence characteristic coefficient T0 from ∼35–45 K for DH laser wafers to ∼65–80 K for MQW laser wafers in contrast to previous experimental results.