Controlled uniform growth of GaInAsP/InP structures for laser application on 2 inch wafers by LP-MOVPE at 20 mbar
- 31 December 1988
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 93 (1-4) , 285-291
- https://doi.org/10.1016/0022-0248(88)90541-6
Abstract
No abstract availableKeywords
This publication has 13 references indexed in Scilit:
- LP-MOCVD growth and characterization of undoped and modulation doped GaInAsP/InP and GaInAs/InP multi quantum wellsJournal of Crystal Growth, 1988
- Characterization of InGaAsP/InP double-heterostructure wafers grown by metalorganic vapor phase epitaxy for semiconductor lasers by photoluminescence investigation with high-power YAG-laser excitationJournal of Applied Physics, 1988
- Lpe highly perfect ingaasp/lnp structure characterization by x-ray double crystal diffractometryJournal of Electronic Materials, 1987
- The growth and characterization of device quality InP/ Ga1-xinxasyp1-y double heterostructures by atmospheric-pressure MOVPE using trimethylindiumJournal of Electronic Materials, 1986
- LPE of InP and InGaAsP on InP substrates; A verification of the diffusion limited growth modelJournal of Crystal Growth, 1986
- Molecular beam epitaxy of in1-xGaxASyP1-y(y ≃2.2 ×) lattice matched to InP using gas cellsJournal of Electronic Materials, 1986
- Two-dimensional electron gases in quantum well and superlattices of Ga0.25In0.75As0.50P0.50/InP heterostructures grown by low pressure metalorganic chemical vapor depositionApplied Physics Letters, 1985
- LPE growth of high purity InP and In1−xGaxP1−yAsyJournal of Crystal Growth, 1982
- Vapor-phase growth of (In,Ga)(As,P) quaternary alloysIEEE Journal of Quantum Electronics, 1981
- Band gap versus composition and demonstration of Vegard’s law for In1−xGaxAsyP1−y lattice matched to InPApplied Physics Letters, 1978