The growth and characterization of device quality InP/ Ga1-xinxasyp1-y double heterostructures by atmospheric-pressure MOVPE using trimethylindium
- 1 July 1986
- journal article
- research article
- Published by Springer Nature in Journal of Electronic Materials
- Vol. 15 (4) , 205-213
- https://doi.org/10.1007/bf02659633
Abstract
No abstract availableKeywords
This publication has 20 references indexed in Scilit:
- Silicon Doping in InP Grown by Metalorganic Vapor Phase Epitaxy Using SilaneJapanese Journal of Applied Physics, 1985
- InGaAsP/InP double heterostructure lasers grown by atmospheric-pressure MOCVDElectronics Letters, 1985
- A re-examination of boundary layer theory for a horizontal CVD reactorJournal of Crystal Growth, 1984
- A critical appraisal of growth mechanisms in MOVPEJournal of Crystal Growth, 1984
- Conditions for OMVPE Growth of GaInAsP/InP CrystalJapanese Journal of Applied Physics, 1984
- Metal organic vapour phase epitaxy of indium phosphideJournal of Crystal Growth, 1983
- OMVPE growth of InP using TMInJournal of Crystal Growth, 1983
- Croissance D'InP par épitaxie vapeur organométalliqueJournal of Crystal Growth, 1983
- Growth and Characterization of Ga0.47In0.53As Films on InP Substrates Using Triethylgallium, Triethylindium, and ArsineJournal of the Electrochemical Society, 1983
- Growth of semi-insulating epitaxial gallium arsenide by chromium doping in the metal-alkyl+hydride systemJournal of Crystal Growth, 1978