Conditions for OMVPE Growth of GaInAsP/InP Crystal
- 1 September 1984
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 23 (9R) , 1182
- https://doi.org/10.1143/jjap.23.1182
Abstract
The conditions required for the growth of GaInAsP/InP by organometallic vapor-phase epitaxy (OMVPE) covering the available bandgap wavelength of 1.3–1.6 µm were obtained experimentally with a carefully-arranged experimental set-up. The precision required in controlling the gas flows and temperatures for lattice matching is discussed. The relations between alloy compositions and source gas flow ratios were investigated, as well as p-n junctions. Lasing operation at a wavelength of 1.58 µm was achieved with GaInAsP/InP grown under these growth conditions.Keywords
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