The carrier mobilities in Ga0.47In0.53as grown by organo-mettalic CVD and liquid-phase epitaxy
- 1 July 1981
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 54 (1) , 127-131
- https://doi.org/10.1016/0022-0248(81)90258-x
Abstract
No abstract availableKeywords
This publication has 13 references indexed in Scilit:
- Liquid phase epitaxial growth and characterization of high purity lattice matched GaxIn1-xAs ON B InPJournal of Electronic Materials, 1980
- Ga0.47In0.53As: A ternary semiconductor for photodetector applicationsIEEE Journal of Quantum Electronics, 1980
- Growth of Ga 0.47 In 0.53 As on InP by low-pressure m.o. c.v.d.Electronics Letters, 1980
- Integrated In 0.53 Ga 0.47 As p-i-n f.e.t. photoreceiverElectronics Letters, 1980
- Compositional dependence of the electron mobility in Inl-x Gax Asy P1-yJournal of Electronic Materials, 1980
- Hall Mobility and Hall Factor of In0.53Ga0.47AsJapanese Journal of Applied Physics, 1980
- The growth of GaxIn1−xAs on (100) InP by liquid-phase epitaxyApplied Physics Letters, 1978
- Growth and characterization of lattice-matched epitaxial films of GaxIn1−xAs/InP by liquid-phase epitaxyJournal of Applied Physics, 1977
- Velocity-field characteristics of Ga1−xInxP1−yAsy quaternary alloysApplied Physics Letters, 1977
- Liquid Phase Epitaxial Growth, Electron Mobility and Maximum Drift Velocity of In1-xGaxAs (x\cong0.5) for Microwave DevicesJapanese Journal of Applied Physics, 1977