The growth of GaxIn1−xAs on (100) InP by liquid-phase epitaxy
- 15 April 1978
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 32 (8) , 497-499
- https://doi.org/10.1063/1.90100
Abstract
We have grown a series of films of the ternary alloy GaxIn1−xAs on (100) InP near the lattice‐matched composition Ga0.47In0.53As. The results show clearly that the distribution coefficient of gallium is about 10% larger for growth on the (100) face than on the (111B) face of InP. Thus we show that the solid composition obtained in liquid‐phase epitaxy under near‐equilibrium growth conditions is strongly affected by factors other than the liquid composition and temperature.Keywords
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