Growth and Characterization of Ga0.47In0.53As Films on InP Substrates Using Triethylgallium, Triethylindium, and Arsine
- 1 May 1983
- journal article
- Published by The Electrochemical Society in Journal of the Electrochemical Society
- Vol. 130 (5) , 1191-1195
- https://doi.org/10.1149/1.2119915