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Growth and Characterization of Ga0.47In0.53As Films on InP Substrates Using Triethylgallium, Triethylindium, and Arsine
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10.1149/1.2119915
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Growth and Characterization of Ga0.47In0.53As Films on InP Substrates Using Triethylgallium, Triethylindium, and Arsine
Cited-By
10.1149/1.2119915
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