Silicon Doping in InP Grown by Metalorganic Vapor Phase Epitaxy Using Silane

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Abstract
Si-doped InP were grown by metalorganic vapor phase epitaxy (MOVPE) using silane (SiH4). Room temperature electron concentrations of up to 7×1018 cm-3 were successfully achieved with good doping controllability. The growth of undoped high-purity InP (n ∼2×1015 cm-3) was observed immediately after the growth of heavily-doped InP (n ∼2×1018 cm-3). This indicates that SiH4 has no “memory effect”, though the memory effect has been reported for H2Se. The optical properties are comparable with S- or Se-doped InP grown by MOVPE. These results show that the Si from SiH4 is a useful n-type dopant for the MOVPE growth of InP.