H2Se “memory effects” upon doping profiles in GaAs grown by metalorganic chemical vapor deposition (MO-CVD)
- 1 May 1984
- journal article
- Published by Springer Nature in Journal of Electronic Materials
- Vol. 13 (3) , 447-461
- https://doi.org/10.1007/bf02656647
Abstract
No abstract availableKeywords
This publication has 3 references indexed in Scilit:
- Some characteristics of highly N-doped VPE grown GaAs epilayersJournal of Electronic Materials, 1981
- Silicon and germanium doping of epitaxial gallium arsenide grown by the trimethylgallium-arsine methodJournal of Crystal Growth, 1979
- Diffusion in Compound SemiconductorsPhysical Review B, 1961