High-Quality InGaAs Grown by Low-Pressure Metalorganic Vapor Phase Epitaxy Using a Vertical Reactor
- 1 August 1984
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 23 (8A) , L625-627
- https://doi.org/10.1143/jjap.23.l625
Abstract
This paper presents the first successful application of a vertical reactor system to the MOVPE growth of high-quality InGaAs on InP substrates. The growth is carried out at low pressure, using triethylindium, triethylgallium, and arsine as source materials. Epitaxial layers with carrier concentrations 1015 cm-3, electron mobilities 8000 cm2/(Vs) (300 K) and 30000 cm2/(Vs) (77 K), and photoluminescence half-width 15 meV (77 K) are obtained. The composition variation over the grown layer surface is very small.Keywords
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